자기저항효과소자의 제조 방법

Method for manufacturing magnetoresistance effect element

Abstract

A method for manufacturing a magnetoresistance effect element is provided to achieve a highly sensitive magnetism detection by obtaining a large amount of variation of magnetoresistance, high reliability, and high magnetic stability. A magnetoresistance effect element includes a first electrode(1), a substrate layer(2), a semi-magnetic layer(3), a magnetization fixed layer(4), a spacer layer(5), a magnetization free layer(6), a first protective layer(7), a second protective layer(8), and a second electrode(9). The substrate layer includes a Ta layer with a thickness of 5nm and a Ru layer with a thickness of 2nm. The anti-ferromagnetic layer has a thickness of 15nm and is made of a PtMn material. The magnetization fixed layer includes a first magnetization fixed layer(4-1), a magnetization anti-parallel coupling layer(4-2), and a second magnetization fixed layer(4-3). The spacer layer is made of a Cu material and has a thickness of 3nm. The first magnetization fixed layer has a thickness between 3 and 4nm and is made of a Co90Fe10 material. The magnetization anti-parallel coupling layer has a thickness of 0.9nm and is made of the Ru material. The second magnetization fixed layer includes a functional layer(10-1) applied therein and is bonded with the Co90Fe10 layer with a thickness of 1.5nm.
자화 고착층, 비자성 중간층, 및 자화 자유층이 순차적으로 적층되어 있는 자기저항효과소자를 제조하는 방법이 개시되어 있다. 이 방법은, 상기 자화 고착층과 상기 자화 자유층 중 어느 하나가 될 자성층의 적어도 일부를 형성하는 단계와; 상기 자성층의 일부 상에 산화물, 질화물, 및 불화물(fluoride) 중 적어도 하나를 포함하는 기능층을 형성하는 단계와; 상기 기능층을 이온빔과 플라스마 조사 중 어느 하나에 노출시킴으로써 상기 기능층의 일부를 제거하는 단계를 포함한다. 자기저항효과소자, CIP-GMR(Current-In-Plane-Giant-Magnetoresistance), TMR(Tunneling Magnetoresistance), CPP(Current-Perpendicular-to-Plane)-GMR, 하프 메탈(half metal)

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